| 摘要 |
PURPOSE:To improve light emission characteristics by setting a temperature of a substrate to a range of a special value when a semiconductor crystalline thin film is grown in a method for manufacturing a semiconductor device having the step of growing a semiconductor crystalline thin film having an Si-SiGe heterojunction structure on the substrate. CONSTITUTION:In order to grow a semiconductor crystalline thin film having an Si-SiGe heterojunction structure, a pressure of a vacuum chamber X is set to 10<-1>-10<-3>Pa. Material gas is diffused from an end of an opening 43a, a communication tube 40c set to a distance of 2-5cm within 10cm from a substrate 1 to form a film on the substrate 1. In this case, the substrate 1 is heated to a temperature range of 600-900 deg.C and desirably 620-800 deg.C. Thus, the substrate 1 is heated to 600-900 deg.C, thereby manufacturing a semiconductor crystalline thin film having excellent light emission characteristics and high quality. Thus, a semiconductor device having, in addition to fundamental performance as semiconductor, performance of a light emitting element, etc., can be manufactured. |
