发明名称 |
METHOD FOR CORRECTING PROJECTING DEFECT |
摘要 |
<p>PURPOSE:To correct a microprojecting defect with a laser correcting device by registering a region to be irradiated with a laser beam by directing the angle part of the region to be irradiated with the laser beam toward a normal pattern side and specifying the size of a rectangular aperture. CONSTITUTION:The angle part of the rectangular aperture for determining the region 4 to be irradiated with the laser beam is registered to the projecting defect part 3 projecting from the normal pattern and is directed toward the normal pattern part. The irradiation with the laser is performed by setting the size of the rectangular aperture in such a manner that residues do not remain at this region 4 to be irradiated. Namely, light shielding layer patterns 2 consisting essentially of chromium are formed by a lithography technique on a transparent silica glass substrate 1, by which the projecting defect 3 is made to remain after the formation of the photomask. The irradiation with the laser is, thereupon, so executed by holding the region 4 to be directly irradiated with the laser set by the aperture image as a fixed region and directing the angle part of the region 4 to be directly irradiated toward the normal pattern side in such a manner that the front end of the angle comes into contact with the end of the normal pattern part. The defect is thus removed.</p> |
申请公布号 |
JPH0764275(A) |
申请公布日期 |
1995.03.10 |
申请号 |
JP19930230812 |
申请日期 |
1993.08.25 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
NOGUCHI SHIGERU;HANZAWA KENICHI;SUZUKI YUTAKA;YOKOYAMA HISAFUMI |
分类号 |
G03F1/72;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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