FIELD EMISSION DEVICE AND THE MANUFACTURING METHOD

摘要

a silicon substrate (31) which is doped with high density impurity; an emitter tip (35) which is formed in a body with the substrate; a first insulating layer (3a) which is formed to surround the under part of the slope of the emitter tip and the substrate; a second insulating layer (3b) which is formed to surround the first insulating layer; a third insulating layer (3c) which is formed over the second insulating layer; a gate electrode (37)which is formed over the third insulating layer.