Methods for forming transistor devices with different source/drain contact liners and the resulting devices

摘要

A method includes forming first and second contact openings so as to expose first and second source/drain regions, respectively, of a semiconductor material. At least one process operation is performed to selectively form a first liner only in the first contact opening. The first liner covers a bottom portion of the first contact opening and exposes a sidewall portion of the first contact opening. A second liner is formed in the first and second contact openings. At least one process operation is performed so as to form a conductive material above the second liner to fill the first and second contact openings and define first and second contacts conductively coupled to the first and second source/drain regions, respectively.

主权项

1. A method, comprising:
forming first and second contact openings so as to expose first and second source/drain regions, respectively, of a semiconductor material; performing at least one process operation to selectively form a first liner only in said first contact opening, wherein said first liner covers a bottom portion of said first contact opening and exposes a sidewall portion of said first contact opening; forming a second liner in said first and second contact openings; and performing at least one process operation so as to form a conductive material above said second liner to fill said first and second contact openings and define first and second contacts conductively coupled to said first and second source/drain regions, respectively.