摘要 |
A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces. |
主权项 |
1. A semiconductor light-emitting element, comprising:
a substrate; and a semiconductor stack portion provided on said substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer, said substrate having
a property to allow transmission of light from said light-emitting layer, anda hexahedral shape including a first surface on which said semiconductor stack portion is provided, a second surface located opposite to said first surface, a pair of third surfaces orthogonal to said first surface and said second surface, and a pair of fourth surfaces orthogonal to said first surface and said second surface and different from said pair of third surfaces, said first surface having a projecting and recessed structure having a recess and a projection alternately formed, each of said third surfaces having a first reformed layer at a position distant by a first distance from said second surface, each of said fourth surfaces having two or more reformed layers, said two or more reformed layers having a second reformed layer, said second reformed layer being provided at a position distant by a second distance from said second surface, and a number of said first reformed layers provided in each of said third surface being smaller than a number of said two or more reformed layers provided in each of said fourth surface. |