| 摘要 |
<p>A chemical vapor deposition (CVD) system of the type having an enclosure housing a process chamber and a supply of cleaning gas, features a lid having a base plate (46) with opposed first and second major surfaces and a plurality of throughways (52, 164, 166) extending therebetween to provide an asymmetric flow of cleaning gas into the chamber. Specifically, a subportion of the second major surface (50) lies in a plane of truncation and faces the process chamber when the lid is in a closed position. The remaining portions of the second major surface are recessed, defining central (68) and annular (70) recesses. The annular recess has a base surface and two spaced-apart side surfaces (70a, 70b) extending from the base surface and terminating proximate to the plane of truncation. The plurality of throughways consists of primary and secondary throughways, each of which extends from an opening in the first major surface and terminates in an orifice. The orifices (164a, 166a) associated with the secondary throughways are positioned in one of the side surfaces of the annular recess. The orifices (36) associated with the primary throughways lie in the plane that extends orthogonally to the spaced-apart side surfaces.</p> |
