| 摘要 |
PROBLEM TO BE SOLVED: To stably form a protective film which is mainly composed of homogeneous (111) oriented MgO crystal over the entire surface of the upper layer of a dielectric layer at a high speed by making a raw material vapor flow interact with a plasma formed between a plasma generating source and an anode electrode. SOLUTION: A raw material vapor flow 17 formed by evaporation or sublimation in a raw material evaporating part 2 is carried towards the surface of a dielectric layer 18 of AC-PDP. On the other hand, electrons or plasmas 19 generated by a plasma generating source 4 are supplied into a vacuum tank 1 to form the existing region of a plasma flow 20. At this time, the raw material vapor flow 17 crosses the present region of the plasma flow 20 and also interacts with the plasma 19. When a raw material containing 50% or more of Mg metal is used, a gas containing a prescribed quantity of oxygen is preferably introduced through a reaction gas inlet port arranged on the sidewall 14 of the vacuum tank 1. The raw material vapor flow 17 then reaches the surface of the dielectric layer 18 to form a protective film which is composed mainly of MgO crystal. |
