| 摘要 |
<p>A method of forming a multilevel interconnect includes depositing a layer (20) of insulative material atop a first conductive layer (10). Trenches and vias are formed in the insulation layer (20). A thin liner layer (40) is deposited atop the insulation layer (20). Portions of the underlying insulation layer (20) outside of the trenches and vias are exposed by etching away portions of the liner layer (40). A subsequent selective deposition of a conductive material (50) forms only within the trenches and vias, thus creating the interconnect.</p> |
