发明名称 FERROELECTRIC MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a ferroelectric memory having ferroelectric capacitors wherein three-valued or more multivalued data are stored in one ferroelectric capacitor and the stored data can be read out. SOLUTION: The memory comprises memory cells 1 having ferroelectric capacitors 3, a DA means 21 which gives a write analog voltage corresponding to three or more input digital values to electrodes of the ferroelectric capacitor 3 to cause a residual polarization in the capacitor 3 when the digital values are inputted and a converting means 23 for restoring a read analog voltage to the original digital value when the read analog voltage obtained according to the residual polarization value of the capacitor 3 is inputted.</p>
申请公布号 JP2000149584(A) 申请公布日期 2000.05.30
申请号 JP19980320575 申请日期 1998.11.11
申请人 FUJITSU LTD 发明人 NUNOKAWA HIDEO
分类号 G11C14/00;G11C11/22;G11C11/24;G11C11/56;G11C27/00;(IPC1-7):G11C27/00 主分类号 G11C14/00
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