Methods for introducing carbon to a semiconductor structure and structures formed thereby

摘要

An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.

主权项

1. A structure comprising:
a gate over a semiconductor substrate; a gate spacer along a sidewall of the gate, a first portion of the gate spacer being distally located from the semiconductor substrate, a second portion of the gate spacer being proximally located to the semiconductor substrate, the first portion having a higher concentration of carbon than the second portion; an etch stop layer over the gate spacer and over the semiconductor substrate, a third portion of the etch stop layer being distally located from the semiconductor substrate, a fourth portion of the etch stop layer being proximally located to the semiconductor substrate, the third portion having a higher concentration of carbon than the fourth portion; and an inter-layer dielectric over the etch stop layer.