METHOD FOR MANUFACTURING BONDING PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a bonding pad of a semiconductor device is provided to improve reliability of the device using copper as a metal interconnection and to easily adopt a conventional wire bonding method, by preventing a copper pad from being oxidized. CONSTITUTION: An interlayer dielectric(120) is formed on an integrated circuit structure(110). The interlayer dielectric is patterned to expose an interconnection of the integrated circuit structure and prepare a space where a copper pad(130) is formed. Copper is buried in the space for forming the copper pad to form the copper pad. A cap layer(140) made of a conductive material is formed on the copper pad. A passivation layer(150) is applied on the entire surface of the structure having the cap layer and patterned to expose the cap layer. An annealing process is performed regarding the resultant structure to form an inter-metal compound(140a) in an interface between the cap layer and the copper pad and to form a surface oxide layer(140b) on the cap layer.