PHOTORESIST POLYMER, METHOD FOR MANUFACTURING SAME, PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a new photoresist polymer and a photoresist composition containing the polymer. SOLUTION: The photoresist polymer is represented by formula 1 (where AC1 and AC2 are each an alicyclic group; and x:y is (0-100) mol%: (0-100) mol%). The photoresist composition containing the polymer is very effectively used in a lithographic step utilizing a light source in the far UV region applicable to a high density minute pattern of <=0.15 μm (DRAM of >=1G), e.g. ArF, KrF, VUV, EUV, E-beams(electron-beams) and X-rays because the composition has high transparency in the far UV region, is excellent in etching resistance and heat resistance and can form an excellent pattern without going through a developing step.