| 摘要 |
A switching element is formed by sequentially depositing on an insulating substrate a gate electrode, a gate insulating film made of an inorganic insulating film, a semiconductor layer, a channel protecting layer, an n+Si layer that will form a source electrode and a drain electrode. Next, a metal layer and a transparent conductive film are formed on edges of the source electrode and the drain electrode. The insulating substrate on which the above films have been deposited is cleaned with vacuum ultraviolet light, before further depositing an interlayer insulating film and a pixel electrode. A substrate for use in a display element obtained in this manner exhibits an excellent adhesion strength between the film processed with vacuum ultraviolet light and a film adjacent to the film processed with vacuum ultraviolet light. Here, if a photosensitive resin blended with a silane compound is used as the interlayer insulating film, the adhesion is improved of the interlayer insulating film to the transparent conductive film and the inorganic insulating film that are in contact with the interlayer insulating film.
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