发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which has a reliable solder bonding with no solder cracks, without having to conduct surface treatment, such as Ni plating on the metal base plate. SOLUTION: In the semiconductor device, a metal base board 6 formed of copper or copper-based alloy, and an insulating substrate 5 having a rear face pattern 4 formed of copper or copper-shaped alloy on a face opposite to the metal base board 6 are bonded by soldering. The rear face pattern 4 is surface- treated, while a solder bonding face 11 of the metal base board 6 is not surface- treated. A ten-point surface roughness (Rz) of the solder bonding face 11 is 4μm or smaller. The rear face pattern 4 and the solder bonding face 11 are bonded by solder 8 with flux mixed in.
申请公布号 JP2002057261(A) 申请公布日期 2002.02.22
申请号 JP20000241114 申请日期 2000.08.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIBORI HIROSHI;NAGATA HIRONOBU;TAKAO HARUO;CHUMA HIDEAKI
分类号 H01L23/40;(IPC1-7):H01L23/40 主分类号 H01L23/40
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