| 摘要 |
PROBLEM TO BE SOLVED: To improve light output efficiency and production efficiency. SOLUTION: A light emitting diode layer 2 where a plurality of diode regions Z are situated in a plane-form state is formed on one surface side of a light transmissive semiconductor wafer 1. The other surface side of the semiconductor wafer 1 is protruded in a conical shape at each light emitting diode region Z. The surface of the protrusion part 11 is covered with a high refractive index low melt point glass layer 4 having a refractive index near to the refractive index of a semiconductor wafer material. The semiconductor wafer 1 is cut for each light emitting diode region Z to form a light emitting diode chip. By melting the low melting point glass layer 4 of each light emitting diode chip, a light output surface is formed in a dome shape by the surface tension. |
