SEMICONDUCTOR DEVICE WITH DAMASCENE GATE STRUCTURE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device with a damascene gate structure is provided to prevent a short channel effect by making a source contact and a drain contact composed of a conductive layer on a semiconductor substrate and by disposing the source and drain contacts at both sides of a gate electrode. CONSTITUTION: A semiconductor substrate(11) is prepared. Source and drain contacts(23s,23d) are sequentially disposed on the semiconductor substrate. A wordline(33) crosses the semiconductor substrate, interposed between the source and drain contacts. An insulation layer pattern(25) is interposed between the source and drain contacts and between the drain contact and the wordline. A gate oxide layer(28c) is interposed between the wordline and the semiconductor substrate.