METHOD FOR PREVENTING SPIKE PHENOMENON IN FORMING VIA HOLE

摘要

PURPOSE: A method for preventing a spike phenomenon in forming a via hole is provided to prevent a defective insulation of devices by guaranteeing an overlap margin between a metal line and a via. CONSTITUTION: The metal line is formed. A HDP(high density plasma) oxide layer is deposited. The first PE TEOS(plasma enhanced tetra ethyl ortho silicate)(20) is deposited on the HDP oxide layer. A photomask process and an etch process are performed to form the first via hole by using photoresist. When the second PE TEOS is deposited on the first via hole, a seam is formed by the second PE TEOS(40). A photomask process is performed by using photoresist. A via etch process is performed and the photoresist is removed to form the second via hole(S3), so that the spike phenomenon is prevented even if a misalign occurs due to a reduced interval of the via etch time.