| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a nitride semiconductor which can be easily manufactured and on which a semiconductor structure having a high AlN molar fraction can be stacked without generating cracks. <P>SOLUTION: A semiconductor layer 116 can be brought into a low stress state because the internal stress in the semiconductor layer 116 is once relaxed by gaps. Accordingly, the internal stress accumulated in a first clad layer 121 and a second clad layer 124, deposited on the semiconductor layer 116, is also made small. Consequently, the occurrence of cracks in the first clad layer 121 and the second clad layer 124 can be prevented. That is to say, a semiconductor light emitting element 150 can be manufactured without generating cracks even if a semiconductor having a high AlN molar fraction, in which the internal stress is easily accumulated caused by lattice mismatch, as in the case of the first clad layer 121 and the second clad layer 124, is deposited on a nitride semiconductor substrate 110. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
