| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sulfonium salt having excellent thermal stability and storage stability, to provide a high resolution resist material which contains a specific onium salt containing the sulfonium salt as an acid-generating agent and has high sensitivity, high resolution, and small line edge roughness to ArF and F2 excimer laser beams, and to provide a pattern-forming method using the resist material. <P>SOLUTION: This sulfonium salt represented by general formula (1) [R<SP>01</SP>groups are each identically or differently a 1 to 12C straight chain, branched or cyclic alkyl, which may contain a carbonyl group, ether group or ether group, or a 6 to 12C aryl, a 7 to 20C aralkyl or thiophenyl; (p) is 1 or 2]. The resist material containing the acid-generating agent (sulfonium salt) has characteristics such as especially excellent resolution, small dimensional differences between isolated patterns and crowded patterns, small line edge roughness and small pattern formation changes even on light exposure in water (exposure in a state immersed in a liquid), because the solubility of the resist material in water is extremely low. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
