| 发明名称 |
|
| 摘要 |
The present invention relates to a method of growing an optimum-thickness silicon dioxide layer for a nonvolatile metal-silicon nitride-silicon oxide-silicon field effect memory transistor near atmospheric pressure in a controllable manner. A silicon wafer, having source and drain regions therein, is placed within an epitaxial reactor through which an inert gas is then made to flow at a rate of 30 liters/minute. The silicon wafer is heated to 1,000 DEG centigrade, and a 1.2-liter flow of oxygen is introduced into said epitaxial reactor for 15 minutes. The flow of oxygen gas is dispersed throughout the flow of the inert gas. The silicon crystal is slowly oxidized to form a 52.5-angstrom thick silicon dioxide layer thereon. When the selected time of oxidation has passed, the small flow of the oxygen into the epitaxial reactor is stopped. The total oxygen-inert flowing gas pressure in the epitaxial reactor is slightly above atmospheric pressure. A precise regulation of the thickness of a silicon dioxide layer grown on a silicon crystal is achieved by regulating the flow rate of oxygen relative to the flow rate of inert gas and regulating the oxidation temperature. The method of the present invention allows one to produce a 52.5-angstrom thick silicon dioxide layer on a silicon crystal. The 52.5-angstrom thick silicon dioxide layer is then covered with a 1,000-angstrom thick silicon nitride layer by chemical decomposition in the epitaxial reactor. A metal electrode in the silicon nitride layer and metal electrodes on the uncovered source and drain regions complete an MNOS field effect memory transistor which has very good switching characteristics. |
| 申请公布号 |
DE2052221(C3) |
申请公布日期 |
1978.03.02 |
| 申请号 |
DE19702052221 |
申请日期 |
1970.10.23 |
| 申请人 |
NCR CORP., DAYTON, OHIO (V.ST.A.) |
发明人 |
NABER, CHARLES THEODORE, CENTERVILLE, OHIO (V.ST.A.) |
| 分类号 |
C23C8/12;H01L21/28;H01L21/316;H01L29/00;H01L29/792;(IPC1-7):01L21/316 |
主分类号 |
C23C8/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
