发明名称 |
Method of producing a semiconductor device |
摘要 |
In a case where a semiconductor device is produced comprising at least one semiconductor element, an isolation region surrounding the semiconductor element and a thick silicon oxide layer lying on and around the semiconductor element, the thick oxide layer is formed by thermally-oxidizing the epitaxial layer having a buried layer and, at the same time, the isolation region is formed in the epitaxial layer by heating for thermal oxidation. Prior to a step of introducing impurities into the epitaxial layer, a patterned thin silicon oxide layer is formed. This thin silicon oxide layer is varied into the thick oxide layer by the thermal-oxidation treatment.
|
申请公布号 |
US4343080(A) |
申请公布日期 |
1982.08.10 |
申请号 |
US19800155122 |
申请日期 |
1980.05.30 |
申请人 |
FIJITSU LIMITED |
发明人 |
HATAISHI, OSAMU;MOMMA, YOSHINOBU;ABE, RYOJI |
分类号 |
H01L21/316;H01L21/331;H01L21/76;H01L29/73;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|