发明名称 |
Process for producing planar components |
摘要 |
In a process for producing a plurality of planar components, an insulating layer which does not yet have the desired final thickness is first produced on the principal face of the semiconductor wafer that requires the insulating layer. The insulating layer initially applied is divided up into smaller areas in such a way that no stresses occur between the material of the insulating layer and that of the common semiconductor wafer. The insulating layer is then reinforced in one or more process steps until its final thickness is achieved.
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申请公布号 |
DE3138340(A1) |
申请公布日期 |
1983.04.14 |
申请号 |
DE19813138340 |
申请日期 |
1981.09.26 |
申请人 |
LICENTIA PATENT-VERWALTUNGS-GMBH |
发明人 |
HENTSCHEL,HANS;MROCZEK,WERNER |
分类号 |
H01L21/033;H01L21/316;(IPC1-7):H01L21/95;H01L21/78;H01L21/31 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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