| 发明名称 |
Method of bonding crystalline silicon bodies. |
| 摘要 |
<p>A method of bonding two single-crystal silicon bodies comprises the steps of: (i) mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less; (ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces.</p> |
| 申请公布号 |
EP0136050(A1) |
申请公布日期 |
1985.04.03 |
| 申请号 |
EP19840305653 |
申请日期 |
1984.08.20 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMBO, MASARU C/O PATENT DIVISION;FUKUDA, KIYOSHI C/O PATENT DIVISION |
| 分类号 |
C04B37/00;B23K20/24;C30B29/06;C30B33/00;C30B33/06;G01L9/00;H01L21/02;H01L21/18;H01L21/20;H01L21/304;H01L27/12;(IPC1-7):C30B33/00;G01L9/06 |
主分类号 |
C04B37/00 |
| 代理机构 |
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