发明名称 |
High-density IC isolation technique capacitors |
摘要 |
A semiconductor substrate having an epitaxial layer on its upper surface is provided with a masking layer. Holes are photolithographically etched in the masking layer where isolation diffusion regions are to be formed. Then aluminum ions are implanted into the surface and diffused completely through the epitaxial layer so as to create tubs of epitaxial material that are PN junction isolated. Since aluminum is a fast diffuser, the diffusion time is greatly reduced, thereby reducing the up diffusion of buried N+ collector so that the original epitaxial layer can be made relatively thin. Lateral isolation diffusion is reduced, thereby substantially reducing the surface area required for isolation. Thus, the process is capable of increasing the component density in the completed integrated circuit.
|
申请公布号 |
US4512816(A) |
申请公布日期 |
1985.04.23 |
申请号 |
US19840602264 |
申请日期 |
1984.04.23 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
RAMDE, AMOLAK R.;KHADDER, WADIE N.;KRISHNA, SURINDER |
分类号 |
H01L21/225;H01L21/265;H01L21/761;(IPC1-7):H01L21/265;H01L21/20 |
主分类号 |
H01L21/225 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|