| 发明名称 |
SEMICONDUCTOR FILM AND PROCESS FOR ITS PRODUCTION |
| 摘要 |
A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 ANGSTROM , and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.
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| 申请公布号 |
US5194398(A) |
申请公布日期 |
1993.03.16 |
| 申请号 |
US19920830967 |
申请日期 |
1992.02.06 |
| 申请人 |
MITSUI TOATSU CHEMICALS, INC. |
发明人 |
MIYACHI, KENJI;FUKUDA, NOBUHIRO;ASHIDA, YOSHINORI;KOYAMA, MASATO |
| 分类号 |
C23C14/06;C23C14/58;C23C16/56;H01L21/203;H01L21/205;H01L21/30;H01L31/20;(IPC1-7):H01L21/20 |
主分类号 |
C23C14/06 |
| 代理机构 |
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