| 摘要 |
PURPOSE:To enable a complementary MIS transistor device to be prevented from deteriorating in characteristics due to a hot carrier effect and decreasing in threshold voltage due to a short channel effect, and to enhance in response speed, and micronize. CONSTITUTION:N-type diffusion regions 21a, 22a, 21b, and 22b which are higher than a P-type well region 11a and an N-type well region 11b but lower than a source and a drain in impurity concentration and broader than the source and the drain in diffusion region in a crosswise direction are formed in a complementary MIS transistor device, where the N-type diffusion regions 21a, 22a, 21b, and 22b are extended laterally so as to reach to a point just under the end of an insulating gate 18 and to extend in a depthwise direction to reach to a point shallower than the source and the drain. A source and a drain can be lessened in junction capacitance in an N-type well region 11b, so that a complementary MIS transistor device of this design can be enhanced in response.
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