| 摘要 |
<p>PURPOSE: To rapidly form an insulating film having a high insulating characteristic. CONSTITUTION: The lower insulating film 32a is formed on one surface of a substrate 31 by executing a sputtering method using tantalum oxide as a target for two minutes in a mixed gaseous atmosphere composed of oxygen of an oxygen concn. of 3% and argon. In succession, the upper insulating film 32b is formed thereon by executing the sputtering method for two minutes in the mixed gaseous atmosphere of the oxygen concn. of 15%. The film thicknesses of the insulating films 32a, 32b are selected to be 300nm in all. Gate wirings, source wirings, picture element electrodes 35 and TFTs are formed on the insulating film 32b. The insulating film 32 consisting of the insulating films 32a, 32b has the excellent insulating characteristic and is formed in a short period of time. There is no more leak current in the display device formed by using such substrates and the excellent display grade is obtd.</p> |
