| 摘要 |
PROBLEM TO BE SOLVED: To obtain a defect-free strain multiple quantum well structure by forming a film of a multiple quantum well structure consisting of a well layer with compression strain and a barrier layer which latice-matches with a board or has tensile strain by an organic metallic molecular beam epitaxial method. SOLUTION: An InP buffer layer, an InGaAsP guide layer which lattice- matches with a board, a multiple quantum well structure, an InGaAsP guide layer which lattice matches with a board and an InP cap layer are laminated on an n-type InP board one by one. A multiple quantum well structure consists of an InAsP well layer having compression strain and an InGaAsP barrier layer having tensile strain. In this lamination structure, trimethylindium, triethylgallium, arsine, phosphine are used as raw material by an organic metallic molecular beam epitaxial method and a film is formed at a growth temperature of 250 deg.C. Similar effect can be obtained by using InGaP instead of InGaAsP as a barrier layer. |
