| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate the need for intricate calculations and to decrease the man-hours for production at the time of producing a working mask of which proximity effect is corrected. SOLUTION: A mask exposure optical system which induces the proximity effect equal to the proximity effect which arises in a wafer exposure device at the time of transferring patterns to a wafer 13, etc., by using a working mask 12 is used at the time of producing the working mask 12 from a master mask 11 by a pattern transfer method using photographic technology. The pattern transfer to the working mask 12 from the master mask 11 is executed by using the exposure optical system described above, and the proximity effect is induced in the reverse direction. Thereby, the working mask of which proximity effect is corrected, is produced self-matchingly. The need for the intricate calculations, etc., is eliminated, production stages are decreased and the easy production is assured.</p> |
