| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the increase in off current by light incidence and to lessen the adverse influence of the capacitors by light shielding films on images. SOLUTION: Upper gate electrodes 106, 107 and lower gate electrodes 102 are formed via insulating films 103, 105 above and below a semiconductor thin film having channel regions 104, source regions and drain regions 112. The lower gate electrodes 102 overlap at least partly on the adjacent upper gate electrodes 106, 107 and do not overlap on the source regions and drain regions 111, 112. An impurity of the same conduction type as the conduction type of the source regions and drain regions 111, 112 may be introduced into the parts 114 on the lower electrodes of the semiconductor thin film. The upper gate electrodes 106, 107 and the lower gate electrodes 102 may be connected to the same signal lines and the specified voltage may be impressed on the lower gate electrodes 102.</p> |
