| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain a magnetoresistance phenomenon in a polycrystalline substance which can be easily manufactured in comparison with a single crystal, and moreover, approximately at room temperatures, and moreover, to obtain a magnetoresistance element in which the spin polarizability of a conduction electrons becomes a spin polarizability of 100%, at a cryogenic temperature. SOLUTION: A perovskite crystal structure shown by a general formula of A2BB'O6 is formed, a double alignment perovskite crystal structure, wherein A atoms occupying a site A in the perovskite crystal structure are Sr atoms, B and B' atoms occupying a site B in the perovskite crystal structure are similarly Fe and Re atoms, and the Fe and Re atoms occupy alternately the site B in the perovskite crystal structure. As a result, an Sr2FeReO6 to show negative huge magnetoresistance characteristics in a total temperature range of 300 K (room temperatures) to 2 K is obtained, and probes or the like which are used for a magnetic sensing element at room temperatures and a spin polarization scanning tunnel microscope are effectively obtained. |
