| 摘要 |
PURPOSE: An isolation layer of a semiconductor device and a method for forming the same are provided to form an isolation layer by using a re-oxidation process under a high temperature. CONSTITUTION: An isolation layer of a semiconductor device comprises a semiconductor substrate(31), a trench formed on the semiconductor substrate, an insulating layer formed on the trench, a first burying insulating layer on a predetermined depth of the trench, and a second burying insulating layer formed on an upper portion of the first burying insulating layer. A method for forming the same comprises the steps of: depositing a first and a second pad insulating layer(32) on a semiconductor substrate; patterning the first and the second pad insulating layers; forming an insulating layer within a surface of the trench; depositing a flat insulating layer(37) on a front face including the trench; burying the trench as much as a predetermined depth; depositing a high density insulating layer(38) on the second pad insulating layer; flattening the high density insulating layer; removing the second pad insulating layer; and burying the upper portion of the trench by removing the first pad insulating layer and the high density insulating layer.
|
