| 摘要 |
<p>A new method to artificially modulate a crystal lattice is disclosed, where the modulation has a controlled periodicity and thickness in the range of one to several hundred nanometers. The present invention relates to the fabrication of periodically strained crystal lattices where the period and thickness of the modulated region is controlled by bonding two crystal wafers at a specified twist angle. Two polished and clean crystal wafers are placed in intimate contact at a specified twist angle and, if necessary, heated to obtain bonding between the two wafers. The two crystal lattices modulate each other, resulting in a modulation near the interface between the crystal with a periodicity that is different from that of the crystal lattices. This periodic modulation affects the electronic and structural properties of the two crystals in the vicinity of the interface. The modulation of the electronic properties leads to the formation of a highly regular quantum dot or quantum wire structures of controlled period near the crystal interface, with applications in electronics, optoelectronics and magnetic devices. The modulation of the crystal structure can be exploited for the formation of metrological standards in the 1-100 nanometer range, or gratings for diffractive optic elements with grating periods in the same range. By transferring the periodic modulation to the free surface of a crystal, it can be used as a template for further growth of periodically modulated crystalline layers by evaporation techniques.</p> |
