| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of any crack at the bonding part of a semiconductor chip and a dicing tape at the time of adhering the dicing tape on the back face of a semiconductor wafer, and then cutting and separating the semiconductor chip by using a cutting blade. SOLUTION: At the time of cutting and separating a semiconductor wafer on which devices are formed by repeatedly forming shallow grooves by rotating and moving a cutting blade, plural ladder-shaped dicing grooves are formed by successively switching the width of the blades corresponding to the depth of the dicing grooves from the larger width to the smaller width. For example, a first dicing groove 11 whose width is w1 and whose depth is d1 is formed by using a first cutting blade, and a second dicing groove 12 whose width is w2 and whose depth is d2 is formed by using a second cutting blade, and finally a third dicing groove 13 whose width is w3 and whose depth is d3 is formed by using a third cutting blade. |
