SURFACE TREATMENT DEVICE FOR SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To improve quality of surface treatment of a semiconductor wafer and workability. SOLUTION: A heating ring 23 for supporting and heating the outer peripheral portion of a semiconductor wafer 1 as placed is provided on a wafer support base 22. An annular engaging recessed portion 22b and an annular support base side vacuum chamber 28 are provided on the outer peripheral side of the upper surface of the wafer support base 22. A guide ring 26 for positioning while engaged in the engaging recessed portion 22b is provided on the lower surface side of a cylindrical wafer holding ring 25. A packing 24 for sealing the outer peripheral edge portion of a surface 1a to be treated of a semiconductor wafer 1 is provided to this guide ring 26. An annular support base side vacuum chamber 30 is provided on the lower surface of the wafer holding ring 25 and a cylinder 27 for fastening by vacuum is provided between this vacuum chamber 30 and the support base side vacuum chamber 28. When the wafer holding ring 25 and the wafer support base 22 are fastened, a wafer treatment chamber 35 is constituted with the surface 1a to be treated of the semiconductor wafer 1 as a bottom surface and the inner peripheral surface of the wafer holding ring 25 as an inner wall, into which etchant is directly charged.