摘要 |
<p>PROBLEM TO BE SOLVED: To provide polishing slurry which is especially useful as a polishing agent for an insulated dielectric layer in shallow trench isolation(STI) in a manufacturing process of a semiconductor or an IC. SOLUTION: The polishing slurry to be used in a manufacturing process of a semiconductor or an integrated circuit(IC) contains cerium oxide, hydroxide of aluminum, cerium salt and water, and arbitrarily acid substance for adjusting pH of the slurry less than 5.</p> |