发明名称 POLISHING SLURRY AND ITS USE
摘要 <p>PROBLEM TO BE SOLVED: To provide polishing slurry which is especially useful as a polishing agent for an insulated dielectric layer in shallow trench isolation(STI) in a manufacturing process of a semiconductor or an IC. SOLUTION: The polishing slurry to be used in a manufacturing process of a semiconductor or an integrated circuit(IC) contains cerium oxide, hydroxide of aluminum, cerium salt and water, and arbitrarily acid substance for adjusting pH of the slurry less than 5.</p>
申请公布号 JP2001284296(A) 申请公布日期 2001.10.12
申请号 JP20010056718 申请日期 2001.03.01
申请人 ETERNAL CHEMICAL CO LTD 发明人 MIN-SHON SAI
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B37/00
代理机构 代理人
主权项
地址