| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetecting sensor wherein each light receiving element can be operated independently by using a new constitution. SOLUTION: In a light receiving element forming island of a sensor chip 3, P regions 12, 14 of photodiodes DR, DCI are formed on a surface layer part of an N-type epitaxial layer 15b, and the P regions 12, 14 are in contact with electrodes 27, 28. A deep N+ region 30 is formed on the N-type epitaxial layer 15b between the adjacent P regions 12, 14 and reaches a buried N+ region 20. Carriers which are generated by light irradiation from the photodiodes DR, DCI are trapped by the deep N+ region 20. On a silicon substrate 15, an aluminum film 42a as a light shielding film is arranged between forming regions of the photodiodes DR, DCI.
|
