| 摘要 |
A semiconductor device includes first and second transistors to be arranged a point symmetry with respect to a point and having first and second gates and first and second channel regions, respectively. The first and second gates are formed based on first and second gate electrode patterns to be arranged a point symmetry with respect to the point, respectively. Each of the first and second gate electrode patterns includes first and second serif sections and an electrode section between the first and second serif sections.
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