发明名称 VIRTUAL SRAM DEVICE AND METHOD FOR DRIVING THE SAME
摘要 PURPOSE: A virtual SRAM(Static Random Access Memory) device and a method for driving the same are provided to refresh data of memory cells by using dynamic memory cells. CONSTITUTION: A memory cell array block(34) has a memory cell of a DRAM. A data input/output buffer portion(20) inputs or outputs data through DQ pads(DQ0 to DQi). An address buffer portion(22) receives address signals(A0 to Ai). A command buffer portion(24) receives command signals(/CS,/WE,/OE,/LB,/UB). A data register portion(26) stores write data received from the data input/output buffer portion(20), outputs the write data to the memory cell array block(34), stores read data received from the memory cell array block(34), and the stored read data to the data input/output buffer portion(20). An address register portion(28) stores address signals received from the address buffer portion(22) and outputs the stored address signals to the memory cell array block(34). A refresh control portion(32) precharges and refreshes the memory cell of the memory cell array block(34). A control portion(30) receives command signals(/CS,/WE,/OE,/LB,/UB) from the command buffer portion(24), the address signals(A0 to Ai) from the address buffer portion(22), data signals from the data input/output buffer portion(20), and data signals from the memory cell array block(34), and controls the data input/output buffer portion(20), the data register portion(26), the address register portion(28), the refresh control portion(32), and the memory cell array block(34).
申请公布号 KR20020089992(A) 申请公布日期 2002.11.30
申请号 KR20010029105 申请日期 2001.05.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SAENG HWAN
分类号 G11C11/403;G11C11/406;G11C11/407;G11C11/4076;G11C11/408;G11C11/409;(IPC1-7):G11C11/413 主分类号 G11C11/403
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