| 摘要 |
Described is a semiconductor laser for generating an optical beam having a stable polarization mode. The laser includes a semiconductor structure having an active layer and a stressor disposed on the surface of the semiconductor structure. Birefringence and gain anisotropy are induced in the semiconductor structure in response to the stress applied by the stressor. The active layer includes one or more quantum wells fabricated to generate an interfacial strain and a desired gain anisotropy. By fabricating the active layer away from the stressor, the gain anisotropy induced by the stressor is substantially reduced. Consequently, the gain anisotropy from the interfacial stress is greater than the gain anisotropy induced by the stressor. The resulting semiconductor structure has a maximum refractive index direction that is parallel to the direction of maximum gain, thus enabling a stable polarization mode for the laser.
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