发明名称 |
Blankmask and photomask |
摘要 |
Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the light-proof film are formed on a transparent substrate. The photomask may have a high quality by adjusting a composition ratio of a metal, silicon (Si), and light elements that constitute the light-proof film to suppress damage to the pattern caused by an XeF2 gas in an electron-beam repair process. |
申请公布号 |
US9482940(B2) |
申请公布日期 |
2016.11.01 |
申请号 |
US201414503977 |
申请日期 |
2014.10.01 |
申请人 |
S&S TECH CO., LTD. |
发明人 |
Nam Kee-Soo;Kang Geung-Won;Shin Cheol;Lee Jong-Hwa;Yang Chul-Kyu;Kim Chang-Jun;Jeong See-Jun;Jang Kyu-Jin |
分类号 |
G03F1/46;G03F1/38;G03F1/54;G03F1/58 |
主分类号 |
G03F1/46 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A blankmask comprising:
a light-proof film and a hard film formed on a transparent substrate, wherein a degree to which the light-proof film is damaged by an injected gas in a repair process after a pattern is formed is digitized in an anisotropic ratio of 0 to 0.5, and wherein the anisotropic ratio is a ratio of a lateral damage to an etched depth of the pattern. |
地址 |
Daegu KR |