| 发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE:To enhance the holding time of the nonvolatile memory as well as the cycle life time, by injecting N atom or the molecule ion containing N within Si3N4 film which formed Si excessively and the excessive Si is reduced through a heat treatment in the atmosphere of N2 containing no O2 or NH3 with reforming of Si3N4 film. |
| 申请公布号 |
JPS5422178(A) |
申请公布日期 |
1979.02.19 |
| 申请号 |
JP19770087611 |
申请日期 |
1977.07.20 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
TAKAYANAGI SHIGETOSHI;HIRAO TAKASHI |
| 分类号 |
H01L21/306;H01L21/8247;H01L29/417;H01L29/788;H01L29/792 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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