Pixels, imagers and related fabrication methods

摘要

Pixels, imagers and related fabrication methods are described. The described methods result in cross-talk reduction in imagers and related devices by generating depletion regions. The devices can also be used with electronic circuits for imaging applications.

主权项

1. A pixel comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type, formed on the first semiconductor layer; a third semiconductor layer of a second conductivity type that is opposite to the first conductivity type, formed on the second semiconductor layer; a blocking region of the first conductivity type formed in the third semiconductor layer having a first depth from a pixel front side; and a charge collection region of the second conductivity type formed within the third semiconductor layer and the blocking region and extending vertically to a second depth from the pixel front side, wherein the first depth is deeper than the second depth, the charge collection region comprising a first charge collection portion and a second charge collection portion, and wherein the blocking region extends laterally to one direction up to a boundary between the first charge collection portion and the second charge collection portion.