发明名称 METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE AND FERROELECTRIC MEMORY DEVICE
摘要 A method for manufacturing a ferroelectric capacitor includes the steps of: forming a ferroelectric capacitor having at least a lower electrode, a ferroelectric film and an upper electrode on a base substrate; and applying an anneal treatment to the ferroelectric capacitor in an oxygen atmosphere, wherein the step of forming the ferroelectric capacitor includes forming the ferroelectric capacitor to have a structure in which an electrode protection film composed of titanium oxide is provided on the upper electrode.
申请公布号 US2007212796(A1) 申请公布日期 2007.09.13
申请号 US20070680809 申请日期 2007.03.01
申请人 SEIKO EPSON CORPORATION 发明人 MIYAJI MAMORU
分类号 H01L21/00 主分类号 H01L21/00
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