发明名称 Method of manufacturing semiconductor device
摘要 In the present invention, a connection plug region where a connection plug is disposed has a long shape comprising a first length direction and a first width direction, an open region that is exposed by an open portion disposed in an insulation layer on the connection plug has a long shape comprising a second length direction and a second width direction, and during etching when disposing the open portion, the first length direction of the connection plug region and the second length direction of the open region are disposed such that they intersect so as to form a predetermined angle. Thus, it becomes possible to improve the reliability of the electrical connection between the connection plug and the conductive film deposited inside the open portion.
申请公布号 US2007212866(A1) 申请公布日期 2007.09.13
申请号 US20070657641 申请日期 2007.01.25
申请人 INOMATA DAISUKE 发明人 INOMATA DAISUKE
分类号 H01L21/44 主分类号 H01L21/44
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