发明名称 PROCESS FOR PREPARING SINGLE CRYSTAL BINARY METAL OXIDES OF IMPROVED PURITY
摘要 <p>A method for the growth of single crystals of a binary metal oxides of the formula ABO3 where A is an alkali or alkaline earth metal, B is at least one element selected from titanium, niobium and tantalum. A mixture comprising the constituent components of the ABO3 crystal is prepared using a basic oxide or carbonate of A and a stoichiometric excess of an acidic oxide of B. The mixture is heated at an elevated temperature to form a melt and is thereafter exposed to a reactive atmosphere comprised of a mixture of gaseous carbon monoxide and carbon dioxide. Crystal growth from the melt is effected by a top-seeded crystal pulling technique.</p>
申请公布号 WO1987007655(A1) 申请公布日期 1987.12.17
申请号 US1987000854 申请日期 1987.04.16
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