| 摘要 |
PROBLEM TO BE SOLVED: To provide a SiC seed crystal capable of improving polymorphic stability during c plane growth to obtain a high quality single crystal when a SiC single crystal is grown on a c plane.SOLUTION: The SiC seed crystal comprises: a growth surface consisting of a surface approximately parallel to a c plane; and a projection part outside the maximum inscribed circle drawn inside the growth surface (when a plurality of maximum inscribed circles exist, a maximum inscribed circle existing on the downstream side of an offset direction among the maximum inscribed circles). The projection part exists on the upstream side of the offset direction and has a width smaller from the downstream side of the offset direction toward the upstream side of the offset direction. A SiC single crystal is grown on the c plane using such a SiC seed crystal. |
