| 摘要 |
A semiconductive device of the type including a conductivity-modulated field-effect transistor provides all of the three electrodes on the principal surface by use of a buried layer and a variety of means for restricting device current to flow through the buried layer. Some of the arrangements not only overcome some effects of parasitic transistors that are formed, but obtain faster turn-on and turn-off while retaining the desired current capacity of the device. The arrangements include means for stopping the lateral spread of a depletion region, a minority carrier suppression region, and drain wall arrangements, among others.
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