| 摘要 |
A method of producing a silicon membrane has a step of forming an etch stop layer on an upper surface of a silicon substrate having lower and upper opposing surfaces, the etch stop layer comprising an alloy of silicon and at least one other Group IV element. The method of producing a silicon membrane has another step of forming a cap layer on the etch stop layer, the cap layer having lower and upper opposing surfaces with the lower surface contacting the etch stop layer. The method of producing a silicon membrane has a further step of removing a portion of the silicon substrate at a time when the upper surface of the cap layer is exposed, the portion of the silicon substrate being removed extending from the upper surface of the silicon substrate to the lower surface of the silicon substrate to thereby define an exposed portion of the etch stop layer. The exposed portion of the etch stop layer may be removed. Also, the formed membrane can be further processed to define undoped device structures isolated by thin silicon legs. According to another embodiment, a cap layer is never formed and the etch stop layer itself functions as the membrane.
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