发明名称 MANUFACTURE OF SURFACE ACOUSTIC WAVE DEVICE
摘要 PURPOSE: To linearly cut a pattern edge part and to form an electrode pattern in which the film thickness is uniform by making a process forming a metallic film the process in which a substrate surface is set at the location where metallic particles are vertically entered and a film formation is performed. CONSTITUTION: On a lithium niobate piezoelectric substrate 1, a negative type photoresist 2 is applied and the formation of a pattern is performed by an exposure development. Next, an Al film 3a is formed on the substrate 1 and a pattern 2 by using an ion beam sputter. Next, the resist 2 and the Al film 3a are lifted off with resist exfoliation liquid and an Al electrode 3 is formed. The edge part of this electrode 3 is not notched, this chip is mounted on a package and a surface acoustic wave device is obtained. When the Al film is formed, the ion beam comining from an ion gun 5 hits a target 4, Al metallic particles springs out from the target, the particles adhere to the substrate 1 and the Al film 3 is formed. At this time, a substrate surface is set so that the Al particles may be vertically entered the substrate 1 by inclining the substrate 1 by an angleθfrom the surface parallel to the target 4.
申请公布号 JPH0878988(A) 申请公布日期 1996.03.22
申请号 JP19940209952 申请日期 1994.09.02
申请人 TOSHIBA CORP 发明人 KOBAYASHI REIKO;MISHIMA NAOYUKI
分类号 H03H3/08;(IPC1-7):H03H3/08 主分类号 H03H3/08
代理机构 代理人
主权项
地址